IRFD120 Overview
~D~[P~ FIELD EFFECT POWER TRANSISTOR IRFD120,121 D82CL2,K2 1.3 AMPERES 100,60 VOLTS RDS(ON) = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
IRFD120 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement
