GE IRFD120
FIELD EFFECT POWER TRANSISTOR
IRFD120 Specifications
- Package : DIP
- Mount Type : Through Hole
- Current Rating : 1.3A
- Breakdown Voltage : 100V
- RDS(on) Max : 270mΩ
- Input Capacitance : 360pF
- Terminals : 4
- Rise Time : 27ns
- Max Power Dissipation : 1W
- Power Dissipation : 1.3W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRFD120 |
|---|---|
| Datasheet | IRFD120 Download |
| Manufacturer |  GE |
| Description | FIELD EFFECT POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Polysilicon gate - Improved stability and reliability● No secondary breakdown - Excellent ruggedness
● Ultra-fast switching - Independent of temperature
● Voltage controlled - High transconductance
● Low input capacitance - Reduced drive requirement
● Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIMENS
