IRFD120
FEATURES
- Dynamic d V/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package Lead (Pb)-free
HVMDIP IRFD120Pb F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current Pulsed drain current a
VGS at 10 V
TA = 25 °C TA = 100 °C
Linear derating...
