IRFD120 - Power MOSFET

Vishay

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt rating.
Repetitive avalanche rated.
For automatic insertion.
End stackable.
175 °C operating temperature.
Fast switching.
Ease of paralleling.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

IRFD120 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRFD120
Manufacturer	Vishay
File Size	929.02 KB
Description	Power MOSFET
Datasheet	IRFD120 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRFD120	N-Channel Power MOSFET	Intersil Corporation
IRFD120	Power MOSFET	International Rectifier
IRFD120	N-Channel Power MOSFET	Fairchild Semiconductor
IRFD120	N-Channel MOSFET	Siliconix
IRFD120	MOSFET	Motorola

Other Datasheets by Vishay

Part Number	Description
IRFD123	Power MOSFET
IRFD110	Power MOSFET
IRFD113	Power MOSFET
IRFD014	Power MOSFET
IRFD014PbF	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com IRFD120 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single 0.27 FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.