Vishay IRFD120
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.| Part No. | IRFD120 |
|---|---|
| Datasheet | IRFD120 Download |
| Manufacturer |  Vishay |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Dynamic dV/dt rating● Repetitive avalanche rated
● For automatic insertion
● End stackable
● 175 °C operating temperature
● Fast switching
● Ease of paralleling
● Material categorization: for definitions of compliance please see
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ORDERING INFORMATION Package Lead (Pb)-free HVMDIP IRFD120PbFABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current Pulsed drain current a VGS at 10 V TA = 25 °C TA = 100 °C ID IDM Linear derating factor Single pulse avalanche energy b EAS Repetitive avalanche current a IAR Repetitive avalanche energy a EAR Maximum power dissipation Peak diode recovery dV/dt c TA = 25 °C PD dV/dt Operating junction and storage temperature range TJ, Tstg Soldering recommendations (peak temperature) For 10 s Notes a.
