IRFD123 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
For Automatic Insertion.
End Stackable.
175 °C Operating Temperature.
Fast Switching.
Ease of Paralleling.
Compliant to RoHS Directive 2002/95/EC Available RoHS.

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IRFD123 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRFD123
Manufacturer	Vishay
File Size	1.79 MB
Description	Power MOSFET
Datasheet	IRFD123 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRFD123, SiHFD123 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.27 HVMDIP S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.