| Part number | IRFD123 |
|---|---|
| Datasheet | IRFD123_InternationalRectifier.pdf |
| File Size | 266.34 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | N-Channel Power MOSFET |
|
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1 06/09/05 IRFD123 2 .irf. IRFD123 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + - dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + - Reverse Polarity for P-Channel Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRFD123 | Power MOSFET | Vishay |
 |
IRFD123 | N-Channel MOSFET | Siliconix |
 |
IRFD123 | MOSFET | Motorola |
 |
IRFD123 | N-Channel Power MOSFET | Harris Semiconductor |
 |
IRFD123 | (IRFD122) Field Effect Power Transistor | General Electric Solid State |
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRFD120 | Power MOSFET |
| IRFD120PBF | HEXFET Power MOSFET |
| IRFD110 | Power MOSFET |
| IRFD110PBF | HEXFET Power MOSFET |
| IRFD010 | Transistor |
| IRFD012 | Transistor |
| IRFD014 | Power MOSFET |
| IRFD024 | Power MOSFET |
| IRFD210 | Power MOSFET |
| IRFD210PBF | HEXFET Power MOSFET |
