• Part: IRFD1Z0
  • Description: FIELD EFFECT POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: GE
  • Size: 197.33 KB
Download IRFD1Z0 Datasheet PDF
GE
IRFD1Z0
IRFD1Z0 is FIELD EFFECT POWER TRANSISTOR manufactured by GE.
Features - Polysilicon gate - Improved stability and reliability - No secondary breakdown - Excellent ruggedness - Ultra-fast switching - Independent of temperature - Voltage controlled - High transconductance - Low input capacitance - Reduced drive requirement - Excellent thermal stability - Ease of paralleling N-CHANNEl CASE STYLE 4-PIN...