IRFD1Z0 - FIELD EFFECT POWER TRANSISTOR

Product Overview

Part number	IRFD1Z0
Manufacturer	GE
File Size	197.33 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD1Z0 Datasheet
Additional preview pages of the IRFD1Z0 datasheet.

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-CHANNEl CASE STYLE 4-PIN DIP.

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Published: Feb 10, 2019 |