IRFD1Z0 Datasheet N-channel MOSFET

Manufacturer: Harris Semiconductor

Overview: Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.

Datasheet Details

Part number	IRFD1Z0
Manufacturer	Harris Semiconductor
File Size	57.16 KB
Description	N-Channel MOSFET
Datasheet	IRFD1Z0-HarrisSemiconductor.pdf

General Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

Formerly developmental type TA17451.

Key Features

0.4A and 0.5A, 60V and 100V.
rDS(ON) = 2.4Ω and 3.2Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.

IRFD1Z0 Distributor

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