Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features
- 0.4A and 0.5A, 60V and 100V.
- rDS(ON) = 2.4Ω and 3.2Ω.
- SOA is Power Dissipation Limited.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- High Input Impedance.
- Majority Carrier Device.
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”.
IRFD1Z0 Datasheet
