IRFD1Z0 Datasheet | Harris Semiconductor

Features - 0.4A and 0.5A, 60V and 100V - r DS(ON) = 2.4Ω and 3.2Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451. Symbol Ordering Information PART NUMBER PACKAGE BRAND HEXDIP IRFD1Z1 HEXDIP IRFD1Z1 IRFD1Z2 HEXDIP IRFD1Z...