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IRFF221 Datasheet Field Effect Power Transistor

Manufacturer: GE

Overview: ~D~[P~U FIELD EFFECT POVVER TRANSISTOR IRFF220,221 3.5 AMPERES 200, 150 VOLTS ROS(ON) =0.8 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applica~ions such as audio amplifiers and servo motors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

More Datasheets from GE

Part Number Description
IRFF220 FIELD EFFECT POWER TRANSISTOR
IRFF222 FIELD EFFECT POWER TRANSISTOR
IRFF223 FIELD EFFECT POWER TRANSISTOR
IRFF210 FIELD EFFECT POWER TRANSISTOR
IRFF211 FIELD EFFECT POWER TRANSISTOR
IRFF212 FIELD EFFECT POWER TRANSISTOR
IRFF213 FIELD EFFECT POWER TRANSISTOR
IRFF230 FIELD EFFECT POWER TRANSISTOR
IRFF231 FIELD EFFECT POWER TRANSISTOR
IRFF232 FIELD EFFECT POWER TRANSISTOR

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