IRFF223 Overview
~D~[¥~lf FIELD EFFECT POVVER TRANSISTOR IRFF222,223 3 AMPERES 200, 150 VOLTS ROS(ON) = 1.2 n Preliminary This series of N-Channel Enhancement-mode Power .MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies,...
IRFF223 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement