IRFP353 Overview
~D~~ FIELD EFFECT POVVER TRANSISTOR IRFP352,353 13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
IRFP353 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching -Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement
- Excellent thermal stability
