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IRFP351R - N-Channel MOSFET Transistor

Download the IRFP351R datasheet PDF. This datasheet also covers the IRFP351 variant, as both devices belong to the same n-channel mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 13A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 350V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
  • Fast Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFP351-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFP350 N-Channel Power MOSFET Intersil Corporation
IRFP350 Power MOSFET Vishay
IRFP350A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFP351 N-Channel MOSFET Transistor
IRFP350 N-Channel MOSFET Transistor
IRFP350A N-Channel MOSFET Transistor
IRFP350FI N-Channel MOSFET Transistor
IRFP350R N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP351(R) FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.