IRFP350FI
IRFP350FI is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
FEATURES
- Drain Current
- ID= 10A@ TC=25℃
- Drain Source Voltage-
: VDSS= 400V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
- Fast Switching
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
400 V
±20
10 A
40 A
70 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 0.83 80
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS...
