IRFP350FI Datasheet | STMicroelectronics

- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFP350FI Voss 400 V Ros(on) 0.30 10 10 A - HIGH VOLTAGE - FOR OFF-LINE SMPS - HIGH CURRENT - FOR SMPS UPTO 350W - ULTRA FAST SWITCHING - FOR OPERATION AT > 100KHz - EASY DRIVE - REDUCES SIZE AND COST INDUSTRIAL APPLICATIONS: - SWITCHING MODE POWER SUPPLIES - MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistor. Fast switching and easy drive make this POWER MOS transistor ideal for high voltage switching applications include electronic welders, switched mode power supplies and sonar equipment. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Vos - VOGR - VGS 10 10 10M(e) 10LM Ptot Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped (L = 100 p H) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (- -)T~e=pe2ti5t°i Cveto Ra1t2in5g°:CPulse width limited by max junction temperature June 1988 400 400 ±20 10 6.3 60 60 70 0.56 -55 to 150 150 V V V A A A A W W/o C °C °C 1/6 349 THERMAL DATA Rthj _case Thermal resistance junction-case Rthc-s Thermal resistance case-sink Rthj _amb Thermal resistance junction-ambient Maximum lead temperature for soldering purpose max typ...