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7N60F - 600V N-Channel MOSFET

Download the 7N60F datasheet PDF. This datasheet also covers the 7N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.

Key Features

  • 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information PART NUMBER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (7N60-GFD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 7N60F
Manufacturer GFD
File Size 644.10 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet 7N60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 7N60/7N60F VDSS RDS(ON) ID 600V 1.3Ω 7A Features • 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V • Low gate charge ( typical 29nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 7N60/7N60F TO-220/220F 0GFD www.goford.