7N60F Overview
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 7N60/7N60F VDSS RDS(ON) ID 600V 1.3Ω.
7N60F Key Features
- 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V
- Low gate charge ( typical 29nC)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
