7N60F Datasheet | GFD

600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp ballasts based on half bridge topology. 7N60/7N60F VDSS RDS(ON) 600V 1.3Ω 7A Features - 7A, 600V, RDS(on) = 1.3Ω @VGS = 10 V - Low gate charge ( typical 29nC) - Fast switching - 100% avalanche tested - Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 7N60/7N60F TO-220/220F...