GENERAL DESCRIPTION
CASE OUTLINE 55QT Common Source ABSOLUTE MAXIMUM RATINGS
Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 110 W 1.6°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS
@ 25°C SYMBOL ΒVdss Idss Igss Vgs(th) Vds(on) gFS Ciss Crss Coss CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TEST CONDITIONS Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Vgs = 20V, Vds = 0V Vds = 10V, Id = 10ma Vgs = 10V, Id = 2A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz 2 4 1.0 1.4 60 2.5 32 MIN 65 TYP 70 1 1 5 MAX UNITS V A A V V S pF pF pF FUNCTIONAL CHARACTERISTICS @ 25°C GPS ηd IMD3 Common Source...