0809LD30P datasheet by GHZ Technology.
| Part number | 0809LD30P |
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| Datasheet | 0809LD30P_GHZTechnology.pdf |
| File Size | 15.95 KB |
| Manufacturer | GHZ Technology |
| Description | 30 Watt / 28V / 1 Ghz LDMOS FET |
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The 0809LD30P is a mon source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE.
View all GHZ Technology datasheets
| Part Number | Description |
|---|---|
| 0809LD30 | 30 Watt / 28V / 1 Ghz LDMOS FET |
| 0809LD120 | 120 Watt / 28V / 1 Ghz LDMOS FET |
| 0809LD60 | 60 Watt / 28V / 1 Ghz LDMOS FET |
| 0809LD60P | 60 Watt / 28V / 1 Ghz LDMOS FET |
