0912-25 Datasheet | GHz Technology

DESCRIPTION The 0912-25 is a MON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55CX, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25o C2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 125 Watts 60 Volts 4.0 Volts 2.5 Amps - 65 to + 150 o C + 200 o C .. ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces Cob h FE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown Capacitance Collector to Base DC - Current Gain Thermal Resistance TEST CONDITIONS F = 960-1215 MHz Vcc = 50 Volts PW = 10 µsec DF = 1 % F = 1090 MHz Ie = 25 m A Ic = 75 m A Vcb = 50 Volts Ic =300 m A, Vce =5 V MIN 25 3.5 8.5 10 45 10:1 4.0 55 14 10 1.4 o UNITS Watts Watts d B % Volts Volts p F C/W θjc2 Note 1: At rated output power and pulse conditions. 2: At rated pulse conditions Initial Issue June 1, 1994 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz REMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 50 VDC C4 R1 L1 Z3 C3 Input 50 Ohm Z1 Z2 Q1 Z4 Z5 50 Ohm Output C5 C1 C2 PC Board Material .010" Dielectric Teflon Fiberglass Z1=50W , .112,l , .27"w X .834"L Z2=9W , .116,l , .22"w X .811"L Z3=50W , .7,l , .27"w X 1.2"L Move along Z3 for best...