Galaxy Century Microelectronics 2PD601AW
NPN Transistor
| Part No. | 2PD601AW |
|---|---|
| Datasheet | 2PD601AW Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Collector Current.(IC= 100mA）● Excellent HFE Linearity.
● Power dissipation.(PC=200mW) Pb Lead-free
APPLICATIONS
● General purpose application. Production specification 2PD601AW ORDERING INFORMATION Type No. Marking 2PD601AW 6D/6E/6F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F028 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2PD601AWELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)
