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2PD601AW - NPN Transistor

Features

  • Collector Current. (IC= 100mA）.
  • Excellent HFE Linearity.
  • Power dissipation. (PC=200mW) Pb Lead-free.

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    NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 100mA）  Excellent HFE Linearity.  Power dissipation.(PC=200mW) Pb Lead-free APPLICATIONS  General purpose application. Production specification 2PD601AW ORDERING INFORMATION Type No. Marking 2PD601AW 6D/6E/6F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F028 Rev.A www.gmesemi.
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