The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2PD601AW TRANSISTOR (NPN)
FEATURES High Collector Current Low Colletor-Emitter Saturation Voltage APPLICATIONS General Purpose Switching and Amplification
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
6
IC Collector Current
100
PC Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj Junction Temperature Tstg Storage Temperature
150 -55~+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3.