Galaxy Century Microelectronics 2SA1162
Silicon Epitaxial Planar Transistor
| Part No. | 2SA1162 |
|---|---|
| Datasheet | 2SA1162 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent hFE linearity.● Commplementary to 2SC2712.
● High voltage and high current.
● Low noise. Pb Lead-free 2SA1162
APPLICATIONS
● General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 IB Base Current PC Collector Dissipation -30 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C092 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SA1162ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitt
