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2SA1162 - Silicon PNP Transistor

Key Features

  • High voltage and high current: VCEO = -50 V, IC = ?150 mA (max) +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise: NF = 1dB (typ. ), 10dB (max) Small package +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperat.

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SMD Type Silicon PNP Epitaxial Type Transistor 2SA1162 SOT-23 Transistors Features High voltage and high current: VCEO = -50 V, IC = ?150 mA (max) +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise: NF = 1dB (typ.), 10dB (max) Small package +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.