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2SA1162 - Silicon PNP Transistor

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) (6) Low noise: NF = 1 dB (typ. ), 10 dB (max) (7) Complementary to 2SC2712 3. Packaging 2SA1162 S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2021-10-0.

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Datasheet Details

Part number 2SA1162
Manufacturer Toshiba
File Size 305.50 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1162 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon PNP Epitaxial Type 2SA1162 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SC2712 3. Packaging 2SA1162 S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2021-10-06 Rev.3.0 4.