2SA1611 - PNP Silicon Transistor

Galaxy Microelectronics

Key Features

High voltage VCEO=-50V.
Excellent HFE Linearity.
High DC current gain : hFE=200 typ.
Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611.

2SA1611 pnp silicon transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SA1611
Manufacturer	Galaxy Microelectronics
File Size	245.44 KB
Description	PNP Silicon Transistor
Datasheet	2SA1611 Datasheet

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PNP Silicon Epitaxial Planar Transistor FEATURES  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current gain : hFE=200 typ.  Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking 2SA1611 M4/M5/M6/M7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F033 Rev.A www.gmesemi.