Galaxy Century Microelectronics 2SA1611
PNP Silicon Transistor
| Part No. | 2SA1611 |
|---|---|
| Datasheet | 2SA1611 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High voltage VCEO=-50V.● Excellent HFE Linearity.
● High DC current gain : hFE=200 typ.
● Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611
APPLICATIONS
● Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking 2SA1611 M4/M5/M6/M7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F033 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SA1611ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emi
