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2SA1611 Datasheet

The 2SA1611 is a PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SA1611
ManufacturerJCET
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 .
* High DC Current Gain
* High Voltage
* Complementary to 2SC4177 SOT
  –323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -100 PC Collector Power D.
Part Number2SA1611
DescriptionPNP Silicon Transistor
ManufacturerGalaxy Microelectronics
Overview PNP Silicon Epitaxial Planar Transistor FEATURES  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current gain : hFE=200 typ.  Complementary to 2SC4177. Pb Lead-free Production speci.
* High voltage VCEO=-50V.
* Excellent HFE Linearity.
* High DC current gain : hFE=200 typ.
* Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611 APPLICATIONS
* Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking 2SA1611 M4/M5/M6/M.
Part Number2SA1611
DescriptionAUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
ManufacturerNEC
Overview . .
Part Number2SA1611
DescriptionTransistor
ManufacturerKexin Semiconductor
Overview SMD Type PNP Silicon Epitaxia 2SA1611 Transistors IC Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Col. High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg R.

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