2SA1611 - Transistor

Product Overview

Kexin

Part number	2SA1611
Manufacturer	Kexin
File Size	65.09 KB
Description	Transistor
Datasheet	2SA1611 Datasheet
Additional preview pages of the 2SA1611 datasheet.

High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain.
Collector-emitter saturat.

📁 Similar Datasheet

2SA1611 - PNP Transistor (JCET)
2SA1611 - PNP Silicon Transistor (GME)
2SA1611 - AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SA1611 - Transistor (TRANSYS)
2SA1611 - PNP Silicon Plastic Encapsulated Transistor (SeCoS)
2SA1611 - Transistor (Jin Yu Semiconductor)
2SA1611 - Transistor (TY Semiconductor)
2SA1610 - HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (NEC)

Other Datasheets by Kexin

Published: Oct 25, 2013 |