Datasheet4U Logo Datasheet4U.com

2SA1615-Z - Transistor

Key Features

  • Large current capacity. +0.2 9.70 -0.2 High hFE and low collector saturation voltage. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Base current Total power dissipation Junction temperature Storage temperature.
  • PW 10 ms, d.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1615-Z PNP Silicon Transistor NEC
2SA1615-Z PNP Transistor Stanson Technology
2SA1615-Z Silicon PNP Power Transistor Inchange Semiconductor
2SA1615 PNP Silicon Transistor NEC
2SA1615 PNP Transistor Stanson Technology

Other Datasheets by Kexin Semiconductor

Part Number Description
2SA1611 Transistor
2SA1612 Transistor
2SA1617 Transistor
2SA1607 PNP Transistors
2SA1608 Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Silicon Power Transistors 2SA1615-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Large current capacity. +0.2 9.70 -0.2 High hFE and low collector saturation voltage. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Base current Total power dissipation Junction temperature Storage temperature * PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC Icp * IB PT Tj Tstg Rating -30 -20 -10 -10 -15 -0.5 1.