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SMD Type
PNP Silicon Epitaxial Transistor 2SA1612
Transistors
Features
High DC current gain
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -120 -120 -5 -50 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage * Base-emitter voltage Gain bandwidth product Output capacitance *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -120V, IE=0 VEB = -5V, IC=0 VCE = -6V , IC = -1mA VCE = -6V , IC = -0.
2SA1612 Datasheet
