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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1611 TRANSISTOR (PNP)
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-60
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC Collector Current
-100
PC Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3.
2SA1611 Datasheet
