2SA1797 Datasheet PDF

FEATURES

● Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A).
● Excellent DC current gain characteristics.
● Complements the 2SA1797 and 2SC4672.
● MSL 3

APPLICATIONS

● Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1797 AGP/AGQ 2SA1797 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO Collector-Emitter Voltage -50 VEBO IC PC Emitter-Base Voltage Collector Current Collector Dissipation -6 DC -2 Pulse -5 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃ E027 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SA1797

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50