Galaxy Century Microelectronics 2SA940
Epitaxial Planar PNP Transistor
| Part No. | 2SA940 |
|---|---|
| Datasheet | 2SA940 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Epitaxial Planar PNP Transistor |
| Buy | Stock & Price |
FEATURES
z Complements the 2SC2073.APPLICATIONS
z Power AmplifierAPPLICATIONS
. z Vertical OutputAPPLICATIONS
. Pb Lead-free Production specification 2SA940 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -150 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -150 V -5 V -1.5 A -0.5 A 1.5 W 25 -55 to +150 ℃ X027 Rev.A 1 Production specification Epitaxial Planar PNP Transistor 2SA940ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base Breakdown Voltage V(BR)CBO IC=-100μA,IE=0 -150 V Collector-emitter Breakdown Voltage V(BR)CEO IC=-1mA,IB=0 -150 V Emitter-base Breakdow
