LGE 2SA940
PNP Transistor
| Part No. | 2SA940 |
|---|---|
| Datasheet | 2SA940 Download |
| Manufacturer |  LGE |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
3 2 1 Wide safe Operating Area. Complementary to 2SC2703 1. BASE 2. COLLECTOR 3. EMITTER 2SA940(PNP) TO-220 Transistor TO-220MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol VCBO VCEO VEBO IC PC Tj Tstg Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Value -150 -150 -5 -1.5 1.5 150 -55-150 Units V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-100μA, IE=0 -150 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -150 V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO IE=-100μA, IC=0 ICBO VCB=-120V, IE=0 IEBO VEB=-5V, IC=0 -5 V -10 μA -10 μA DC current gain hFE VCE=-10V, IC=-0.5