Galaxy Century Microelectronics 2SB1124
PNP Epitaxial Planar Silicon Transistors
| Part No. | 2SB1124 |
|---|---|
| Datasheet | 2SB1124 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | PNP Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
FEATURES
● Fast switching speed● Low collector-to-emitter saturation voltage
● Large current capacity and wide ASO
● RoHS compliant with Halogen-free Product Specification 2SB1124 ORDERING INFORMATION Type No. 2SB1124-R 2SB1124-S 2SB1124-T 2SB1124-U Marking BG BG BG BG SOT-89 Package Code SOT-89 SOT-89 SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector Dissipation -6 V -3 A -6 1 W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ STM0110A 1 Product Specification PNP Epitaxial Planar Silicon Transistors 2SB1124
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA IC=0 -6...
