Kexin Electronics 2SB1124
PNP Epitaxial Planar Silicon Transistors
FEATURES
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -6 -3 -6 500 150 -55 to +150 Unit V V V A A mW 1 Free Datasheet SMD Type 2SB1124ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -100mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz Transistors M...