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2SB1124 - PNP Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • Large current capacity and wide ASO. 0.4 3 1.5 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.4 ( ) : 2SB1124 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2038A [2SB1124/2SD1624] 4.5 1.6 Features · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Large current capacity and wide ASO. 0.4 3 1.5 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.