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2SB1123 - PNP Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity and wide ASO.
  • Fast switching speed.
  • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C [2SB1123 / 2SD1623] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter S.

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Other Datasheets by SANYO (now Panasonic)

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2SB1120 PNP Transistor
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2SB1122 PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit : mm 2038A Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C [2SB1123 / 2SD1623] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 3 1.5 2 3.0 1 0.75 0.