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2SB1123 - Transistors

Key Features

  • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Mounted on a ceramic board (250mm250.8mm) Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -60 -50 -6 -2 -4 0.5 1.3 150 -55 to +150 Unit V V V.

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SMD Type High-Current Switching Applications 2SB1123 Transistors Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Mounted on a ceramic board (250mm250.8mm) Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -60 -50 -6 -2 -4 0.5 1.3 150 -55 to +150 Unit V V V A A W W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.