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2SB1120 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -10 -7 -2.5 -5 500 150 -55 to +150 Un.

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -10 -7 -2.