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2SB1122 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • Adoption of FBET process. . Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -1 -2 500 150 -55 to +150 Unit V V V A A mW www. kexin. com. cn 1 Free Datasheet http://www. datasheet4u. com SMD Type 2SB1122.

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1122 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -1 -2 500 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.