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2SB1120 - PNP Transistor

Key Features

  • Low collector-to-emitter saturation voltage : VCE(sat)max=.
  • 0.45V.
  • Large current capacity : IC=.
  • 2.5A, ICP=.
  • 5A.
  • Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1120] E : Emitter C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:1786A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1120 High-Current Driver Applications Applications · Strobes, voltage regulators, relay drivers, lamp drivers. Features · Low collector-to-emitter saturation voltage : VCE(sat)max=–0.45V. · Large current capacity : IC=–2.5A, ICP=–5A. · Very small size making it easy to provide highdensity, small-sized hybrid IC’s.