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2SB1124 - Bipolar Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Fast switching speed Specifications ( ): 2SB1124 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP.
  • Low collector-to-emitter saturation voltage.
  • Large current capacity and wide ASO Conditions Ratings (--)60 (--)50 (--)6 (--)3 (--)6 Unit V V V A A Continued on next page.

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Datasheet Details

Part number 2SB1124
Manufacturer onsemi
File Size 354.95 KB
Description Bipolar Transistor
Datasheet download datasheet 2SB1124 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2019B 2SB1124/2SD1624 Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET, MBIT processes • Fast switching speed Specifications ( ): 2SB1124 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO Conditions Ratings (--)60 (--)50 (--)6 (--)3 (--)6 Unit V V V A A Continued on next page. Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 1 0.4 2 0.5 1.5 3.0 3 1.0 2.5 4.