• Part: 2SB1241D
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 337.78 KB
Download 2SB1241D Datasheet PDF
Galaxy Microelectronics
2SB1241D
2SB1241D is Power Transistor manufactured by Galaxy Microelectronics.
- Part of the 2SB1241I comparator family.
Features - High breakdown voltage and high current - Good h FE linearty - Low VCE(sat) - Ro HS pliant with Halogen-free Power Transistor 2SB1241I 2SB1241D Mechanic al Data - Case: TO-251, TO-252 - Molding pound: UL flammability classification rating 94V-0 - Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208 TO-251 TO-252 Ordering Information Part Number 2SB1241I-Q 2SB1241I-R 2SB1241D-Q 2SB1241D-R Package TO-251 TO-251 TO-252 TO-252 Shipping Quantity 80pcs / Tube 80pcs / Tube 80pcs / Tube or 2500pcs / Tape & Reel 80pcs / Tube or 2500pcs / Tape & Reel Marking Code B1241I B1241I B1241D B1241D Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Pulse) - 1 Symbol VCBO VCEO VEBO IC ICM Value -80 -80 -5 -1 -2 Unit V V V A A Thermal Characteristics Parameter Symbol Power Dissipation (Collector) - 2 Junction Temperature Storage Temperature Range TSTG Notes: 1. Single pulse, Pw=100ms. 2. Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Value 1 -55 ~ +150 -55 ~ +150 Unit W °C °C STM0373A: April 2025...