Datasheet Summary
5.5+0.3 1.5±0.3 0.9 1.5
2.5 9.5±0.5
Power Transistor (- 80V,
- 1A)
2SB1260 / 2SB1181 / 2SB1241
- Features
1) Hight breakdown voltage and high current.
BVCEO=- 80V, IC = - 1A 2) Good hFE linearty. 3) Low VCE(sat). plements the 2SD1898 / 2SD1863 / 2SD1733.
- Dimensions (Unit : mm)
2SB1260
4.5+0.2
1.6±0.1
1.5±
2SB1181
6.5±0.2 5.1+0.2
C0.5
2.3+0.2 0.5±0.1
0.5±0.1
4.0 ±0.3 2.5+0.2
- Structure Epitaxial planar type PNP silicon transistor
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
ROHM : MPT3 EIAJ : SC-62
0.4+0.1
0.75 0.9
0.65±0.1
2.3±0.2...
