ROHM Semiconductor 2SB1241
Power Transistor
| Part No. | 2SB1241 |
|---|---|
| Datasheet | 2SB1241 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
1) Hight breakdown voltage and high current. BVCEO=80V, IC = 1A 2) Good hFE linearty. 3) Low VCE(sat). Complements the 2SD1898 / 2SD1863 / 2SD1733.●Dimensions (Unit : mm) 2SB1260 4.5+0.2 1.6±0.1 1.5± 2SB1181 6.5±0.2 5.1+0.2 C0.5 2.3+0.2 0.5±0.1 0.5±0.1 4.0 ±0.3 2.5+0.2
●Structure Epitaxial planar type PNP silicon transistor 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 ROHM : MPT3 EIAJ : SC-62 0.4+0.1 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 6.8±0.2 2.5±0.2 4.4±0.2 0.9 1.0 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45±0.1 (1) Emitter (2) Collector (3) Base
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current IC −1 ICP −2 ∗1 2SB1260 Collector power dissipation 2SB1241, 2SB1181 PC 0.5 2 ∗...
