2SB1241 Datasheet Power Transistor

Manufacturer: ROHM

Overview: 5.5+0.3 1.5±0.3 0.9 1.5 2.5 9.5±0.5 Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241.

Datasheet Details

ght breakdown voltage and high current. BVCEO=80V, IC = 1A 2) Good hFE linearty. 3) Low VCE(sat). Complements the 2SD1898 / 2SD1863 / 2SD1733.
Dimensions (Unit : mm) 2SB1260 4.5+0.2 1.6±0.1 1.5± 2SB1181 6.5±0.2 5.1+0.2 C0.5 2.3+0.2 0.5±0.1 0.5±0.1 4.0 ±0.3 2.5+0.2.
Structure Epitaxial planar type PNP silicon transistor 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 ROHM : MPT3 EIAJ : SC-62 0.4+0.1 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1.

Brand Logo	Part Number	Description	Manufacturer
	2SB1241D	Power Transistor	GME
	2SB1241I	Power Transistor	GME