2SB1308 Description
Power Transistor(-50V,-3A).
2SB1308 Key Features
- Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A
- Excellent DC current gain characterisitics
- plementary the 2SD1963
- 6 V -3
- 55 to+150
2SB1308 is Power Transistor manufactured by Galaxy Microelectronics.
| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1308 | Power Transistor |
WILLAS |
2SB1308 | PNP Transistor |
TRANSYS |
2SB1308 | Plastic-Encapsulated Transistors |
Kexin Semiconductor |
2SB1308 | Power Transistor |
Kexin Semiconductor |
2SB1308-HF | PNP Transistors |
Power Transistor(-50V,-3A).