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2SB1308 - Power Transistor

Key Features

  • Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free.
  • Excellent DC current gain characterisitics.
  • Complementary the 2SD1963. Production specification 2SB1308.

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Power Transistor(-50V,-3A) FEATURES  Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD1963. Production specification 2SB1308 ORDERING INFORMATION Type No. Marking 2SB1308 BFP/BFQ/BFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation -6 V -3 A -5 0.5 W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ E077 Rev.A www.gmesemi.