Galaxy Century Microelectronics 2SB1308
Power Transistor
| Part No. | 2SB1308 |
|---|---|
| Datasheet | 2SB1308 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free● Excellent DC current gain characterisitics.
● Complementary the 2SD1963. Production specification 2SB1308 ORDERING INFORMATION Type No. Marking 2SB1308 BFP/BFQ/BFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation -6 V -3 A -5 0.5 W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ E077 Rev.A 1 Production specification Power Transistor(-50V,-3A) 2SB1308
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC
