2SB1308 Datasheet Power Transistor

Manufacturer: Kexin Semiconductor

Overview: SMD Type Power Transistor 2SB1308 Transistors.

Datasheet Details

Low saturation voltage, typically VCE(sat) = -0.45V (Max. ) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature.
Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP.
PC Tj Tstg Rating -30 -20 -6 -3 -5 0.5 150 -55 to +150 Unit V V V A A W Electrica.

Part Number	Description	Manufacturer
2SB1308	Power Transistor	Rohm
2SB1308	Power Transistor	GME
2SB1308	PNP Transistor	WILLAS
2SB1308	Plastic-Encapsulated Transistors	TRANSYS
2SB1308-P	PNP Plastic-Encapsulate Transistors	MCC

Part Number	Description
2SB1308-HF	PNP Transistors
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2SB1386	Low Frequency Transistor
2SB1386-HF	PNP Transistors
2SB1394	PNP/NPN Epitaxial Planar Silicon Transistors
2SB1396	PNP Epitaxial Planar Silicon Transistor
2SB1397	PNP Epitaxial Planar Silicon Transistors
2SB1000	PNP Transistors
2SB1001	Silicon PNP Transistor
2SB1002	PNP Transistors