Datasheet Summary
Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
Features
Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (PNP)
SOT-89
1. BASE
0.5 -3 -30
W (Tamb=25℃) A V
2. COLLECTOR 1 3. EMITTER 2 3
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency
- Measured using pulse current. unless otherwise specified)
Test conditions MIN -30...
