2SC1654 - Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Key Features

High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA).
High voltage. Pb Lead-free 2SC1654.

2SC1654 silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SC1654
Manufacturer	Galaxy Microelectronics
File Size	308.13 KB
Description	Silicon Epitaxial Planar Transistor
Datasheet	2SC1654 Datasheet

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Full PDF Text Transcription (Reference)

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA).  High voltage. Pb Lead-free 2SC1654 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING INFORMATION Type No. Marking 2SC1654 N5/N6/N7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 180 VCEO Collector-Emitter Voltage 160 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 50 Pt Total Power Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mW ℃ C096 Rev.A www.gmesemi.