Kexin Electronics 2SC1654
NPN Transistor
FEATURES
3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 180 160 5 50 150 125 -55 to +125 Unit V V V mA mWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transiston frequency * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 130V, IE=0 VEB = 5V, IC=0 VCE =3V , IC = 15mA VCE =3V , IC = 1mA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA Cob fT VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V , IE = -10mA 90 70 200 180 0.1 0.73 2.3 120 0.3 1.0 V V pF MHz Min Typ Max 0.1 0.1 400 Unit A A hFE Classification Marking hFE 90 N5 180 N6 135 270 N7 200 400 +0.1 0.38-0.1 0-0.1 1 Free Datasheet SMD Type 2SC1654 Typical Characteristics Transistors IC Fig.1 Total Power Dissipation vs.