2SC2411 Datasheet | Galaxy Microelectronics

Production specification Silicon Epitaxial Planar Transistor Features - Power dissipation: PCM=200Mw. - High ICM(MAX.),I CM(MAX.)=0.5mA. - Low VCE(sat)。 - plements the 2SA1036. Pb Lead-free APPLICATIONS - NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking CP/CQ/CR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 32 5 500 200 -55 to+150 Units V V V mA mW ℃ C097 Rev.A .gmesemi. Pr...