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2SC2883 Datasheet PDF

Galaxy Century Microelectronics 2SC2883

NPN Silicon Transistor

Part No. 2SC2883
Datasheet 2SC2883 Download
Manufacturer Galaxy Century Microelectronics
Description NPN Silicon Transistor
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2SC2883 datasheet page 1 preview

FEATURES

● Suitable for output stage of 3 watts amplifier.
● Small flat package.
● PC=1.0 to 2.0W.
● Complements the 2SA1203. Pb Lead-free Production specification 2SC2883 ORDERING INFORMATION Type No. Marking 2SC2883 GO/GY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 1.5 IB Base Current 0.3 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ E051 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC2883

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IC=10mA,IB=0 IE=1mA,IC=
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