Galaxy Century Microelectronics 2SC2884
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Suitable for output stage of 1 watts amplifier. z High DC current gain. z Small flat package. z PC=1.0 to 2.0W. z Complements the 2SA1204. Pb Lead-free Production specification 2SC2884 SOT-89 ORDERING INFORMATION Type No. Marking 2SC2884 PO1/PY1 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Junction and Storage Temperature 35 30 5 0.8 0.16 500 -55 to +150 Units V V V A A mW ℃ E052 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC2884ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 Collector cut-off current ICBO VCB=35V,IE=0