Toshiba 2SC2884
Silicon NPN TRANSISTOR
| Part No. | 2SC2884 |
|---|---|
| Datasheet | 2SC2884 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High DC current gain: hFE = 100 to 320
● Suitable for output stage of 1 watts amplifier
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SA1204
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) 35 30 5 800 160 500 1000 V V V mA mA mW PW-MINI JEDEC JEITA ― SC-62 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
